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| 2SK2096 Silicon N Channel MOS FET Application High speed power switching TO-3P Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source * Suitable for switching regulator, DC-DC converter * Avalanche ratings 2 1 1 2 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR IAP*** EAR*** Pch** Tch Tstg Ratings 60 20 45 180 45 45 173 100 150 -55 to +150 Unit V V A A A A mJ W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C *** Value at Tch = 25 C, Rg 50 2SK2096 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 25 A VGS = 10 V * ID = 25 A VGS = 4 V * ID = 25 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 25 A VGS = 10 V RL = 1.5 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.018 10 250 2.25 0.022 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ------------------------------------------------ -- 0.023 0.028 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 25 37 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test s See characteristic curve of 2SK1911. -- -- -- -- -- -- -- -- 3530 1480 300 33 160 450 230 1.3 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 45 A, VGS = 0 IF = 45 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 130 -- ns -------------------------------------------------------------------------------------- 2SK2096 Power vs. Temperature Derating 160 Pch (W) I D (A) 500 300 Maximum Safe Operation Area 10 10 0 PW D C 120 100 O s s 1 s m = Channel Dissipation Drain Current 30 10 3 1 pe 10 tio n ra s m 80 (T s (1 ho c 40 Operation in this area is limited by R DS(on) = 25 C t) ) Ta = 25 C 0.3 1 3 10 30 V DS (V) 100 0 50 100 150 Tc (C) 200 0.5 0.1 Case Temperature Drain to Source Voltage Maximun Avalanche Energy vs. Channel Temperature Derating Repetive Avalanche Energy E AR (mJ) 200 I AP = 45 A V DD = 25 V duty < 0.1% Rg > 50 160 120 80 40 0 25 50 75 100 125 150 Channel Temperature Tch (C) 2SK2096 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 1.25 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 Avalanche Test Circuit and Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD V (BR)DSS I AP Rg Vin -15 V D. U. T VDD ID 50 0 VDD V DS V DS Monitor L I AP Monitor EAR = |
Price & Availability of 2SK2096
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